| No. | Partie # | Fabricant | Description | Fiche Technique |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM60N04-12D VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 12 @ |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives AM60N02-09D VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 9 @ VGS = 4.5V 11 @ VGS = 2.5V ID (A) 61 5 |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM60N02-10D VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 10 @ |
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Analog Power |
MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 78 @ VGS = 10V 92 @ VGS = 5.5V |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives AM60N03-09D VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 9 @ VGS = 10V 16 @ VGS = 4.5V ID (A) 61 46 |
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Analog Power |
Dual N-Channel MOSFET ource Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID 30 V ± 20 ± 5.5 ± 20 A IDM ± 20 IS 1.3 A TA=25oC TA=70oC PD 2.1 W 1.3 TJ, Tstg -55 to 150 oC THERMAL RE |
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Analog Power |
N-Channel MOSFET Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID 30 V ±20 9.4 7.4 A IDM ±30 IS 1.6 A TA=25oC TA=70oC PD 3.1 W 2 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RAT |
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Analog Power |
Dual N-Channel MOSFET Continuous Drain Currenta TA=25oC TA=70oC ID 6.8 5.4 A Pulsed Drain Currentb IDM ±30 Continuous Source Current (Diode Conduction)a IS 1.5 A Power Dissipationa TA=25oC TA=70oC PD 1.5 W 1.0 Operating Junction and Storage Temperature Range |
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Analog Power |
P-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools AM60P04-10D VDS (V) -40 PRODUCT SUMMARY rDS(on) (mΩ) 10 @ VGS = -1 |
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Analog Power |
N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM6612N VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 22 @ VGS |
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Analog Power |
Dual N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 24 @ VGS = 4.5V 32 @ VGS = 2.5 |
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Analog Power |
Dual P-Channel MOSFET Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -12 V ±8 -5.7 -4.7 A -10 Continuous Source Current (Diode Conduction)a IS ±1.6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 1.15 0.7 -55 |
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Analog Power |
P & N-Channel MOSFET inuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 30 -30 ±20 ±20 4.3 -3.8 3.5 -3.0 20 -20 Continuous Source Current (Diode Conduction)a IS 1.0 -1.0 Power Dissipationa TA=25oC TA=70oC PD 1.14 1.14 0.73 0.73 Opera |
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Analog Power |
P-Channel MOSFET ating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID IDM IS TA=25oC TA=70oC PD TJ, Tstg -40 ±20 -6.6 -5.4 -30 -1.5 1.8 1.2 -55 to 150 V A A W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= |
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Analog Power |
MOSFET ous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM 6.8 5.4 ±30 1.5 1.2 0.8 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature R |
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Analog Power |
MOSFET us Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM 6.7 5.5 ±30 1.5 1.2 0.8 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Ra |
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Analog Power |
MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 26 @ VGS = |
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Analog Power |
Dual N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 28 @ VGS = 4.5V 40 @ VGS = 2.5 |
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Analog Power |
Dual N-Channel MOSFET • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 15 @ VGS = 4.5V 18 @ VGS = 2.5 |
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Analog Power |
P-Channel MOSFET Drain Currenta TA=25oC TA=70oC ID -4.0 -3.2 A Pulsed Drain Currentb IDM -10 Continuous Source Current (Diode Conduction)a IS ±1.6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 1.15 0.7 |
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