No. | Partie # | Fabricant | Description | Fiche Technique |
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Analog Devices |
Broadband Up/Downconverting Mixer Broadband active mixer with integrated fractional-N PLL RF input frequency range: 100 MHz to 2500 MHz Internal LO frequency range: 1050 MHz to 2300 MHz Flexible IF output interface Input P1dB: 12 dBm Input IP3: 29 dBm Noise figure (SSB): 12 dB Voltag |
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Analog Devices |
Silicon Digital Attenuator Ultrawideband frequency range: 9 kHz to 40 GHz Attenuation range: 0.5 dB steps to 31.5 dB Low insertion loss with impedance match 2.0 dB up to 18 GHz 2.8 dB up to 26 GHz 4.5 dB up to 40 GHz Attenuation accuracy with impedance match ±(0.20 + 1.0% of a |
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Analog Devices |
500 MHz Four-Quadrant Multiplier DC to >500 MHz operation Differential ±1 V full-scale inputs Differential ±4 mA full-scale output current Low distortion (≤0.05% for 0 dBm input) Supply voltages from ±4 V to ±9 V Low power (280 mW typical at VS = ±5 V) APPLICATIONS High speed real t |
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Analog Devices |
Quad RF Transceiver 8B 4 differential transmitters 4 differential receivers 2 observation receivers with 2 inputs each Center frequency: 75 MHz to 6000 MHz Maximum receiver bandwidth: 200 MHz Maximum transmitter large signal bandwidth: 200 MHz Maximum transmitter synthe |
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Analog Devices |
Narrow-Band and Wideband RF Transceiver ► Highly integrated transceiver with single-channel transmitter and dual-channel receivers ► Frequency range of 30 MHz to 6000 MHz ► Transmitter and receiver bandwidth from 12 kHz to 40 MHz ► Two fully integrated, fractional-N, RF synthesizers ► LVDS |
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Analog Devices |
Quad RF Transceiver 4 differential transmitters 4 differential receivers 2 observation receivers with 2 inputs each Center frequency: 75 MHz to 6000 MHz Fully integrated DPD adaptation engine for power amplifier linearization Crest factor reduction engine Maximum receiv |
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Analog Devices |
Silicon SPDT Switch Ultrawideband frequency range: 9 kHz to 30 GHz Nonreflective 50 Ω design Low insertion loss: 2.0 dB to 30 GHz High isolation: 60 dB to 30 GHz High input linearity 1 dB power compression (P1dB): 28 dBm typical Third-order intercept (IP3): 52 dBm typic |
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Analog Devices |
Silicon SPDT / Reflective Switch Reflective, 50 Ω design Low insertion loss 0.6 dB typical to 2.0 GHz 0.7 dB typical to 3.5 GHz High isolation 50 dB typical to 2.0 GHz 46 dB typical to 3.5 GHz High power handling RF input power, continuous wave (CW) at TCASE = 85°C 43 dBm maximum op |
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Analog Devices |
4-Quadrant Multiplier Simple: basic function is W = XY + Z Complete: minimal external components required Very fast: Settles to 0.1% of full scale (FS) in 20 ns DC-coupled voltage output simplifies use High differential input impedance X, Y, and Z inputs Low multiplier no |
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Analog Devices |
Dual Narrow/Wideband RF Transceiver ► 2 × 2 highly integrated transceiver ► Frequency range of 30 MHz to 6000 MHz ► Transmitter and receiver bandwidth from 12 kHz to 40 MHz ► Two fully integrated, fractional-N, RF synthesizers ► LVDS and CMOS synchronous serial data interface options ► |
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Analog Devices |
Silicon Digital Attenuator Ultrawideband frequency range: 9 kHz to 40 GHz Attenuation range: 2 dB steps to 30 dB Low insertion loss 1.6 dB to 18 GHz 2.0 dB to 26 GHz 3.4 dB to 40 GHz Attenuation accuracy ±(0.1 + 1.0%) of attenuation state up to 18 GHz ±(0.1 + 2.5%) of attenuat |
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Analog Devices |
5V Voltage References Ultracompact SC70 and TSOT packages Low temperature coefficient 8-lead SOIC: 3 ppm/°C typical 5-lead SC70: 9 ppm/°C maximum 5-lead TSOT: 9 ppm/°C maximum Initial accuracy ±0.1% No external capacitor required Low noise 10 µV p-p, 0.1 Hz to 10.0 Hz (AD |
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Analog Devices |
Dual Programmable Filters and VGAs Matched VGAs and programmable filters Maximum gain: 53 dB Continuous gain control range: 60 dB Filter bypass mode I/Q bandwidth ±1 dB gain flatness: >1250 MHz 4-pole Butterworth filter I/Q bandwidth: 36 MHz to 720 MHz RMS detector IMD3: <−55 dBc for |
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Analog Devices |
Silicon SPDT Switch Ultrawideband frequency range: 100 MHz to 30 GHz Nonreflective 50 Ω design Low insertion loss: 2.0 dB to 30 GHz High isolation: 60 dB to 30 GHz High input linearity 1 dB power compression (P1dB): 28 dBm typical Third-order intercept (IP3): 52 dBm typ |
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Analog Devices |
Nonreflective Switch Nonreflective 50 Ω design Positive control range: 0 V to 3.3 V Low insertion loss: 0.8 dB at 8.0 GHz High isolation: 34 dB at 8.0 GHz High power handling 33 dBm through path 27 dBm termination path High linearity 1 dB compression (P1dB): 37 dBm typic |
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Analog Devices |
0.8 GHz to 2.7 GHz Direct Conversion Quadrature Demodulator Integrated RF and baseband AGC amplifiers Quadrature phase accuracy 1° typ I/Q amplitude balance 0.3 dB typ Third-order intercept (IIP3) +11.5 dBm @ min gain Noise figure 11 dB @ max gain AGC range 69.5 dB Baseband level control circuit Low LO drive |
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Analog Devices |
10 MHz/ 4-Quadrant Multiplier/Divider High accuracy 0.1% typical error High speed 10 MHz full power bandwidth 450 V/μs slew rate 200 ns settling to 0.1% at full power Low distortion −80 dBc from any input Third-order IMD typically −75 dBc at 10 MHz Low noise 94 dB SNR, 10 Hz to 20 kHz 70 |
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Analog Devices |
High Accuracy Voltage Reference ► Maximum temperature coefficient ► 4 ppm/°C (C grade, −40°C to +85°C) ► Low long-term drift (LTD): 30 ppm (initial 1 khr typical) ► Initial output voltage error: ±0.1% (maximum) ► Operating temperature range: −40°C to +125°C ► Output current: +10 mA |
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Analog Devices |
High Accuracy Voltage References Maximum temperature coefficient: 5 ppm/°C (B grade) Low long-term drift (LTD): 30 ppm (initial 1 khr typical) Initial output voltage error: ±0.1% (maximum) Operating temperature range: −40°C to +125°C Output current: +10 mA source/−3 mA sink Low quie |
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Analog Devices |
Wideband Quadrature Modulator I/Q modulator with integrated fractional-N PLL RF output frequency range: 400 MHz to 3000 MHz Internal LO frequency range: 356.25 MHz to 2855 MHz Output P1dB: 10.8 dBm at 2140 MHz Output IP3: 31.1 dBm at 2140 MHz Carrier feedthrough: −44.3 dBm at 214 |
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