Ampleon BLF fiche technique

No.	Partie #	Fabricant	Description
1	BLF189XRA	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated dual sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 500 MHz)  Compliant to Directive 2002/95/EC, regarding Restrict
2	BLF8G09LS-400PGW	Ampleon	Power LDMOS transistor and benefits  Excellent ruggedness  Device can operate with the supply current delivered through the video leads  High efficiency  Low thermal resistance providing excellent thermal stability  Designed for broadband operation  Lower output capa
3	BLF2425M6LS180P	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  High efficiency  Excellent thermal stability  Designed for broadband operation (2400 MHz to 2500 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regardin
4	BLF8G22LS-270	Ampleon	Power LDMOS transistor and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Designed for broadband operation  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects pro
5	BLF7G20LS-90P	Ampleon	Power LDMOS transistor and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Designed for broadband operation (1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz)  Lower output capacitance for improved perf
6	BLF888D	Ampleon	Power LDMOS transistor and benefits  High efficiency  High power gain  Excellent ruggedness (VSWR  40 : 1 through all phases)  Excellent thermal stability  Integrated ESD protection  One Doherty design covers the
7	BLF888A	Ampleon	Power LDMOS transistor
8	BLF7G22LS-200	Ampleon	Power LDMOS transistor and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  Integrated ESD protection  Complian
9	BLF6G27L-50BN	Ampleon	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (2500 MHz to 2700 MHz)  Internally matched for ease of use  Integrated current s
10	BLF2425M7LS250P	Ampleon	Power LDMOS transistor and benefits  High efficiency  Easy power control  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Internally matched  Compliant to Directive 2002/95/EC, r
11	BLF888DS	Ampleon	Power LDMOS transistor and benefits  High efficiency  High power gain  Excellent ruggedness (VSWR  40 : 1 through all phases)  Excellent thermal stability  Integrated ESD protection  One Doherty design covers the
12	BLF645	Ampleon	Power LDMOS transistor  CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:  Average output power = 100 W  Power gain = 18 dB  Drain efficiency = 56 %  2-tone performance at 1300 MHz, a drain-sourc
13	BLF644P	Ampleon	Power LDMOS transistor
14	BLF8G22LS-240	Ampleon	Power LDMOS transistor
15	BLF8G22LS-200V	Ampleon	Power LDMOS transistor and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Designed for broadband operation  Decoupling leads to enable improved video bandwidth (80 MHz typical)  Lower output capacitance for improved pe
16	BLF8G20LS-220	Ampleon	Power LDMOS transistor
17	BLF8G19LS-170BV	Ampleon	Power LDMOS transistor and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Decoupling leads to enable improved video bandwidth (100 M
18	BLF8G10L-160	Ampleon	Power LDMOS transistor and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Designed for broadband operation (920 MHz to 960 MHz)  Lower output capacitance for improved performance in Doherty applications  Designed for l
19	BLF7G27LS-100	Ampleon	Power LDMOS transistor
20	BLF7G22L-200	Ampleon	Power LDMOS transistor and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  Integrated ESD protection  Complian