America Semiconductor MBR fiche technique

No.	Partie #	Fabricant	Description
1	MBR340NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
2	MBR3150NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
3	MBRT600100	America Semiconductor	Silicon Power Schottky Diode
4	MBR8060R	America Semiconductor	Silicon Power Schottky Diode
5	MBR0540G	American First Semiconductor	(MBR0520G - MBR0540G) 0.5A Surface Mount Schottky Barrier Rectifiers • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low power loss, high efficienc
6	MBR2050CTG	American First Semiconductor	Schottky Barrier Rectifier RREGULARITIES ARE ALLOWED. INCHES DIM MIN MAX A 0.570 0.620 B 0.380 0.405 C 0.160 0.190 D 0.025 0.035 F 0.142 0.161 G 0.095 0.105 H 0.110 0.155 J 0.014 0.025 K 0.500 0.562 L 0.045 0.060 N 0.190 0.210 Q 0.100 0.120 R 0.080 0.110 S 0.045 0.055 T 0.235
7	MBR60080CTR	America Semiconductor	Silicon Power Schottky Diode
8	MBR3520R	America Semiconductor	Silicon Power Schottky Diode
9	MBRS340G	American First Semiconductor	3.0A Surface Mount Schottky Barrier Rectifiers • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability
10	MBRS360G	American First Semiconductor	3.0A Surface Mount Schottky Barrier Rectifiers • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability
11	MBR180TG	American First Semiconductor	Schottky Barrier Rectifier • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability, Low forward voltage drop • High surge capability • For
12	MBR560NG	American First Semiconductor	5.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
13	MBR1040CTG	American First Semiconductor	Schottky Barrier Rectifier 0.620 B 0.380 0.405 C 0.160 0.190 D 0.025 0.035 F 0.142 0.161 G 0.095 0.105 H 0.110 0.155 J 0.014 0.025 K 0.500 0.562 L 0.045 0.060 N 0.190 0.210 Q 0.100 0.120 R 0.080 0.110 S 0.045 0.055 T 0.235 0.255 U 0.000 0.050 V 0.045 --Z --- 0.080 STYLE 6: P
14	MBRT30035	America Semiconductor	Silicon Power Schottky Diode
15	MBRT60035	America Semiconductor	Silicon Power Schottky Diode
16	MBRT60030R	America Semiconductor	Silicon Power Schottky Diode
17	MBR12020CT	America Semiconductor	Silicon Power Schottky Diode
18	MBR12045CT	America Semiconductor	Silicon Power Schottky Diode
19	MBR12060CTR	America Semiconductor	Silicon Power Schottky Diode
20	MBR30045CT	America Semiconductor	Silicon Power Schottky Diode