America Semiconductor BR3 fiche technique

No.	Partie #	Fabricant	Description
1	MBR340NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
2	MBR3150NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
3	MBR3520R	America Semiconductor	Silicon Power Schottky Diode
4	MBR3100NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
5	MBR30045CT	America Semiconductor	Silicon Power Schottky Diode
6	MBR30060CT	America Semiconductor	Silicon Power Schottky Diode
7	MBR300100CT	America Semiconductor	Silicon Power Schottky Diode
8	MBR3535R	America Semiconductor	Silicon Power Schottky Diode
9	BR38	America Semiconductor	Silicon Bridge Rectifier
10	MBR360NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
11	MBR380NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
12	MBR3200NG	American First Semiconductor	3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax
13	MBR30150CTG	American First Semiconductor	Schottky Barrier Rectifier S ARE ALLOWED. INCHES DIM MIN MAX A 0.570 0.620 B 0.380 0.405 C 0.160 0.190 D 0.025 0.035 F 0.142 0.161 G 0.095 0.105 H 0.110 0.155 J 0.014 0.025 K 0.500 0.562 L 0.045 0.060 N 0.190 0.210 Q 0.100 0.120 R 0.080 0.110 S 0.045 0.055 T 0.235 0.255 U 0.0
14	MBR3040PTG	American First Semiconductor	Schottky Barrier Rectifier Metal silicon junction, majority carrier conduction Plastic material used carriers Underwriters Laboratory Classification 94V-0 High surge capability Low power loss, high efficiency High current capability, low forward voltage drop For use in low vol
15	MBR3060PTG	American First Semiconductor	30.0 AMPS. Schottky Barrier Rectifiers Metal silicon junction, majority carrier conduction Plastic material used carriers Underwriters Laboratory Classification 94V-0 High surge capability Low power loss, high efficiency High current capability, low forward voltage drop For use in low vol
16	MBR3080PTG	American First Semiconductor	30.0 AMPS. Schottky Barrier Rectifiers Metal silicon junction, majority carrier conduction Plastic material used carriers Underwriters Laboratory Classification 94V-0 High surge capability Low power loss, high efficiency High current capability, low forward voltage drop For use in low vol
17	MBR30150PTG	American First Semiconductor	30.0 AMPS. Schottky Barrier Rectifiers Metal silicon junction, majority carrier conduction Plastic material used carriers Underwriters Laboratory Classification 94V-0 High surge capability Low power loss, high efficiency High current capability, low forward voltage drop For use in low vol
18	MBR30200PTG	American First Semiconductor	30.0 AMPS. Schottky Barrier Rectifiers Metal silicon junction, majority carrier conduction Plastic material used carriers Underwriters Laboratory Classification 94V-0 High surge capability Low power loss, high efficiency High current capability, low forward voltage drop For use in low vol
19	MBR30030CT	America Semiconductor	Silicon Power Schottky Diode
20	MBR30035CT	America Semiconductor	Silicon Power Schottky Diode