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Alpha Industries AFM DataSheet

No. Partie # Fabricant Description Fiche Technique
1
AFM04P2-000

Alpha Industries
Power GaAs MESFET
I 21 dBm Output Power @ 18 GHz I High Associated Gain, 9 dB @ 18 GHz I High Power Added Efficiency, 25% I Broadband Operation, DC
  –40 GHz I 0.25 µm Ti/Pd/Au Gates I Passivated Surface I Through-Substrate Via Hole Grounding 0.327 mm 0.655 mm Chip thick
Datasheet
2
AFM04P3-000

Alpha Industries
Power GaAs MESFET
s 21 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC
  –26 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Chip Layout Description The AFM04P3-000 is a high performance pow
Datasheet
3
AFM04P3-212

Alpha Industries
Power GaAs MESFET
s Low Noise Figure, 0.6 dB @ 4 GHz s 20 dBm Output Power @ 18 GHz s High Associated Gain, 13 dB @ 4 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC
  –26 GHz s Available in Tape and Reel Packaging Source 212 Gate Drain Source Gate Sourc
Datasheet
4
AFM06P2-000

Alpha Industries
Power GaAs MESFET
s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC
  –40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding 0.327 mm 0.655 mm Chip thi
Datasheet
5
AFM06P3-212

Alpha Industries
Power GaAs MESFET
s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC
  –18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Source 212 Gate Drain Source Gate Source Drain 213 Source Descript
Datasheet
6
AFM06P3-213

Alpha Industries
Power GaAs MESFET
s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC
  –18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Source 212 Gate Drain Source Gate Source Drain 213 Source Descript
Datasheet
7
AFM08P2-000

Alpha Industries
Power GaAs MESFET
s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC
  –40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm s High Associ
Datasheet



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