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Alliance Semiconductor AS6 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
AS6C62256A

Alliance Semiconductor
32K x 8 BIT LOW POWER CMOS SRAM

 32768x8 bit static CMOS RAM
 Access times 70 ns
 Common data inputs and data outputs
 Three-state outputs
 Typ. operating supply current o 70 ns: 50 mA
 TTL/CMOS-compatible
 Automatical reduction of power dissipation in long Read Cycles
 Po
Datasheet
2
AS6C4008

Alliance Semiconductor
512K X 8 BIT LOW POWER CMOS SRAM
Access time : 55 ns Low power consumption: Operatingcurrent : 30/20mA (TYP.) Standby current : 4 µA (TYP.) C-version Single 2.7V ~ 5.5V power supply Fully Compatible with all Competitors 5V product Fully Compatible with all Competitors 3.3V product F
Datasheet
3
AS6C6416-55BIN

Alliance Semiconductor
4M x 16 bit Low Power CMOS SRAM
n Fast access time : 55ns n Low power consumption: Operating current : 12mA (TYP.) Standby current : 12µA (TYP.) n Single 2.7V ~ 3.6V power supply n All inputs and outputs TTL compatible n Fully static operation n Tri-state output n Data byte control
Datasheet
4
AS6C8016

Alliance Semiconductor
512K X 16 BIT SUPER LOW POWER CMOS SRAM
Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 6µA (TYP.) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : L
Datasheet
5
AS6C1616A

Alliance Semiconductor
1024K X 16 BIT LOW POWER CMOS SRAM






• Process Technology : 0.15μm Full CMOS Organization : 1M x 16 bit Power Supply Voltage : 2.7V ~ 3.6V Low Data Retention Voltage : 1.5V(Min.) Three state output and TTL Compatible Package Type : 48-FPBGA AS6C1616A GENERAL DESCRIPTION The
Datasheet
6
AS6C3216A-55TIN

Alliance Semiconductor
32M Bits(2M x 16 / 4M x 8 Switchable) LOW POWER CMOS SRAM
n Fast access time : 55ns n Low power consumption: Operating current : 12mA (TYP.) Standby current : 8µA(TYP.) SL-version n Single 2.7V ~ 3.6V power supply n All inputs and outputs TTL compatible n Fully static operation n Tri-state output n Data byt
Datasheet
7
AS6C6264A

Alliance Semiconductor
8K x 8 BIT LOW POWER CMOS SRAM











 8192 x 8 bit static CMOS RAM 70 ns Access Times Common data inputs and outputs Three-state outputs Typ. operating supply current o 70 ns: 10 mA Standby current: o < 2 μA at Ta ≤ 70 °C Data retention current at 2 V: o < 1 μA at
Datasheet
8
AS6C1016

Alliance Semiconductor
64K X 16 BIT LOW POWER CMOS SRAM
& ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Revised PACKAGE OUTLINE DIMENSION in page 11 Revised VDR to 1.5V Revised OR
Datasheet
9
AS6C2008A

Alliance Semiconductor
256K X 8 BIT LOW POWER CMOS SRAM
Fast access time : 55ns Low power consumption: Operating current : 20/18mA (TYP.) Standby current : 2µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 2.0V (MIN.) Lea
Datasheet
10
AS6C4016

Alliance Semiconductor
256K X 16 BIT SUPER LOW POWER CMOS SRAM
Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 4 A (TYP.) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : L
Datasheet
11
AS6C8008

Alliance Semiconductor
1024K X 8 BIT SUPER LOW POWER CMOS SRAM
Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 6µA (TYP.) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltag
Datasheet
12
AS6C8016A

Alliance Semiconductor
512K x 16 SRAM








• Process Technology : 0.15m Full CMOS Organization : 512K x 16 bit Power Supply Voltage : 2.7V ~ 3.6V Low Data Retention Voltage : 1.5V(Min.) Three state output and TTL Compatible Package Type : 48-FPBGA dual CS
  – A6 is CS2 All parts
Datasheet
13
AS6C1616

Alliance Semiconductor
1024K X 16 BIT LOW POWER CMOS SRAM
Fast access time : 55ns Low power consumption: Operating current : 45/30mA (TYP.) Standby current : 10µA (TYP.) LL-version 4µA (TYP.) SL-version Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation Tri-state ou
Datasheet
14
AS6WA25616

Alliance Semiconductor
3.0V to 3.6V 256K X 16 Intelliwat low-power CMOS SRAM

• AS6WA25616
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 262,144 words × 16 bits
• 3.0V to 3.6V at 55 ns
• Low power consumption: ACTIVE - 144 mW at 3.6V and 55 ns
• Low power consump
Datasheet
15
AS6C8016-55TIN

Alliance Semiconductor
low power CMOS static random access memory
n
 Fast access time : 55ns n
 Low power consumption: Operating current : 30/20mA (TYP.) Standby current : 1.5µA (TYP.) SL-version n
 Single 2.7V ~ 3.6V power supply n
 All inputs and outputs TTL compatible n
 Fully static operation n
 Tri-state outpu
Datasheet
16
AS6UA25616

Alliance Semiconductor
low-power CMOS SRAM







• AS6UA25616 Intelliwatt™ active power circuitry Industrial and commercial temperature ranges available Organization: 262,144 words x 16 bits 2.7V to 3.6V at 55 ns 2.3V to 2.7V at 70 ns Low power consumption: ACTIVE - 114 mW at 3.6V and 5
Datasheet
17
AS6UA51216

Alliance Semiconductor
low power CMOS SRAM








• AS6UA51216 Intelliwatt™ active power circuitry Industrial and commercial temperature ranges available Organization: 524,288 words × 16 bits 2.7V to 3.6V at 55 ns 2.3V to 2.7V at 70 ns 1.65V to 2.3V at 100 ns Low power consumption: ACT
Datasheet
18
AS6UA5128

Alliance Semiconductor
low-power CMOS SRAM

• AS6UA5128
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 524,288 words × 8 bits
• 2.7V to 3.6V at 55 ns
• 2.3V to 2.7V at 70 ns
• Low power consumption: ACTIVE - 144 mW at 3.6V and 55
Datasheet
19
AS6VA25616

Alliance Semiconductor
low-power CMOS SRAM

• AS6VA25616
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 262,144 words × 16 bits
• 2.7V to 3.3V at 55 ns
• Low power consumption: ACTIVE - 132 mW at 3.3V and 55 ns
• 1.2V data retent
Datasheet
20
AS6VA5128

Alliance Semiconductor
low-power CMOS SRAM

• AS6VA5128
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 524,288 words × 8 bits
• 2.7V to 3.3V at 55 ns
• Low power consumption: ACTIVE - 132 mW at 3.3V and 55 ns



• 1.2V data r
Datasheet



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