| No. | Partie # | Fabricant | Description | Fiche Technique |
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Alliance Semiconductor |
3V 512K x 8 / 256K x 16 CMOS Flash EEPROM • Organization: 512Kx8/256Kx16 • Sector architecture - One 16K; two 8K; one 32K; and seven 64K byte sectors - One 8K; two 4K; one 16K; and seven 32K word sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of sectors |
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Alliance Semiconductor |
5V 128K x 8 CMOS FLASH EEPROM for in-system programmability are provided. The AS29F010 provides high performance with a maximum access time of 120, or 150 ns. Chip Enable ( CE), Output Enable (OE), and Write Enable (WE) pins allow easy interface with the system bus. Program, eras |
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Alliance Semiconductor |
5V 512K x 8 CMOS FLASH EEPROM single 5.0V power supply operation for read, write, and erase functions. Internally generated and regulate voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transtition |
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Alliance Semiconductor |
5V 256K x 8/128K x 8 CMOS FLASH EEPROM single 5.0V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transtitions. |
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Alliance Semiconductor |
3V 1M x 8/512K x 16 CMOS Flash EEPROM • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of secto |
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Alliance Semiconductor |
3V 2M x 8 / 1M x 16 CMOS Flash EEPROM single 3.0V power supply operation for Read, Write, and Erase functions. Internally generated and regulated voltages are provided for the Program and Erase operations. A low VCC detector automatically inhibits write operations during power transtitio |
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