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Alfa-MOS |
N-Channel MOSFET 20V/4.0A,RDS(ON)=35mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=45mΩ@VGS=2.5V 20V/2.6A,RDS(ON)=65mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Appl |
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Alfa-MOS |
N-Channel MOSFET 120V/2.0A,RDS(ON)=560mΩ@VGS=10V 120V/2.0A,RDS(ON)=580mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design Application DC/DC Converters Load Switch |
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Alfa-MOS |
N-Channel Enhancement Mode MOSFET 30V/35A,RDS(ON)=8.5mΩ@VGS=10V 30V/20A,RDS(ON)=11.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Buck Converter − High Side − Low Side Synchronous Rectifier − Secondary Rectifie |
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Alfa-MOS |
N-Channel MOSFET 30V/3.6A,RDS(ON)=75mΩ@VGS=10V 30V/3.0A,RDS(ON)=85mΩ@VGS=4.5V 30V/2.2A,RDS(ON)=155mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel |
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Alfa-MOS |
N-Channel MOSFET 20V/2.4A,RDS(ON)=60mΩ@VGS=4.5V 20V/2.0A,RDS(ON)=70mΩ@VGS=2.5V 20V/1.8A,RDS(ON)=100mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design App |
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Alfa-MOS |
N-Channel MOSFET 30V/0.6A,RDS(ON)=440mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=500mΩ@VGS=2.5V 30V/0.4A,RDS(ON)=750mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-523 package design Application Drivers: Relays, So |
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Alfa-MOS |
N-Channel Enhancement Mode MOSFET z 60V/40A,RDS(ON)= 5.0mΩ@VGS=10V z 60V/30A,RDS(ON)= 6.2mΩ@VGS=6.0V z 60V/20A,RDS(ON)= 8.4mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Pin Description ( TO-252-2L ) Application z Motor and Load C |
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Alfa-MOS |
N-Channel Enhancement Mode MOSFET 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information |
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Alfa-MOS |
N-Channel Enhancement Mode MOSFET 100V/4.0A,RDS(ON)= 320mΩ@VGS=10V 100V/4.0A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin Description ( TO-220-3L ) Application High Frequency Boost Converter LED Backlight for LCD TV |
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Alfa-MOS |
N-Channel Enhancement Mode MOSFET 100V/40A,RDS(ON)=6.0mΩ@VGS=10V 100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Power Supply - Secondary Synchronous Rectification Industrial Primary Switch |
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Alfa-MOS |
N-Channel Enhancement Mode MOSFET 100V/30A,RDS(ON)= 12mΩ@VGS=10V 100V/15A,RDS(ON)= 18mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial |
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Alfa-MOS |
N-Channel MOSFET 20V/3.9A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=58mΩ@VGS=2.5V 20V/2.0A,RDS(ON)=70mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 package design Application Por |
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Alfa-MOS |
N-Channel MOSFET 30V/6.0A,RDS(ON)=27mΩ@VGS=10V 30V/4.5A,RDS(ON)=30mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 S |
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Alfa-MOS |
N-Channel MOSFET 20V/3.4A,RDS(ON)=58mΩ@VGS=4.5V 20V/3.0A,RDS(ON)=68mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=88mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel |
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Alfa-MOS |
N-Channel MOSFET 30V/2.8A,RDS(ON)=40mΩ@VGS=10V 30V/2.4A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol |
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Alfa-MOS |
N-Channel MOSFET 30V/1.8A,RDS(ON)=380mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=480mΩ@VGS=2.5V 30V/0.5A,RDS(ON)=900mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application D |
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Alfa-MOS |
N-Channel MOSFET z 20V/3.6A,RDS(ON)=70mΩ@VGS=4.5V z 20V/3.1A,RDS(ON)=90mΩ@VGS=2.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOT-23 package design Application z Portable Equipment z Ba |
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Alfa-MOS |
N-Channel MOSFET 90V/6.8A,RDS(ON)=68mΩ@VGS=10V 90V/5.6A,RDS(ON)=75mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System Pin Define |
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Alfa-MOS |
N-Channel Enhancement Mode MOSFET 60V/3.6A,RDS(ON)=70mΩ@VGS=10V 60V/2.8A,RDS(ON)=78mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Portable Equipment Battery Powere |
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Alfa-MOS |
N-Channel Enhancement Mode MOSFET 30V/5.5A,RDS(ON)=20mΩ@VGS=10V 30V/5.0A,RDS(ON)=24mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23-3L package design Application DC/DC Converters, High Speed Switching Pin Define Pin 1 2 3 Symbol G S D Description Gate |
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