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AiT Semiconductor |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 30V/5.8A, RDS(ON) =28mΩ(typ.)@VGS =10V 30V/5.0A, RDS(ON) =30mΩ(typ.)@VGS =4.5V 30V/3.5A, RDS(ON) =40mΩ(typ.)@VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Av |
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AiT Semiconductor |
-30V P-CHANNEL ENHANCEMENT MODE MOSFET The AM3401 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON) low gate charge and -30V/-4.3A, RDS(ON) =47mΩ(typ.)@VGS =-10V -30 |
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AiT Semiconductor |
30V N-CHANNEL ENHANCEMENT MODE MOSFET The AM3406 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resi |
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AiT Semiconductor |
-30V P-CHANNEL ENHANCEMENT MODE MOSFET The AM3407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in applications. |
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AiT Semiconductor |
30V N-CHANNEL ENHANCEMENT MODE MOSFET 30V/5.8A, RDS(ON) =22mΩ(typ.)@VGS =10V 30V/5.0A, RDS(ON) =25mΩ(typ.)@VGS =4.5V 30V/3.5A, RDS(ON) =31mΩ(typ.)@VGS =2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Av |
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AiT Semiconductor |
30V N-CHANNEL ENHANCEMENT MODE MOSFET The AM3404 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resi |
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AiT Semiconductor |
20V N-CHANNEL ENHANCEMENT MODE MOSFET 20V/5.0A, RDS(ON) =30mΩ(typ.)@VGS =4.5V 30V/4.5A, RDS(ON) =42mΩ(typ.)@VGS =2.5V 30V/3.8A, RDS(ON) =50mΩ(typ.)@VGS =1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability R |
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AiT Semiconductor |
-20V P-CHANNEL ENHANCEMENT MODE MOSFET -20V/-4.0A, RDS(ON) =45mΩ(typ.)@VGS =-4.5V -20V/-4.0A, RDS(ON) =54mΩ(typ.)@VGS =-2.5V -20V/-2.0A, RDS(ON) =68mΩ(typ.)@VGS =-1.8V -20V/-1.0A, RDS(ON) =92mΩ(typ.)@VGS =-1.5V Super high density cell design for extremely low RDS(ON) Exception |
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AiT Semiconductor |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET The AM3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. The |
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AiT Semiconductor |
P-CHANNEL ENHANCEMENT MODE MOSFET -30V/-7.5V, RDS(ON)= 30mΩ(max.) @ VGS= -10V RDS(ON)= 45mΩ(max.) @ VGS= -4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-26 package. APPLICATION Power Manageme |
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