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Advanced Semiconductor UHB DataSheet

No. Partie # Fabricant Description Fiche Technique
1
UHBM45

Advanced Semiconductor
NPN SILICON RF POWER TRANSISTOR



• Omnigold™ Metalization System .040x45° 4X .025 R .115 .430 D E .125 G F H I J K L A C B 2XØ.130 MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O 9.0 A 36 V 18 V 36 V 4.0 V 150 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 1.2 OC/
Datasheet
2
UHBS15-1

Advanced Semiconductor
NPN SILICON RF POWER TRANSISTOR



• Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 55 V 28 V 55 V 4.0 V 57.5 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 3.0 OC/W O O O DIM A B C D E F G H I J K L I J K L MINIMUM inches / mm
Datasheet
3
UHBS15-2

Advanced Semiconductor
NPN SILICON RF POWER TRANSISTOR



• Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 2.0 A 55 V 28 V 55 V 4.0 V 50 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 3.0 OC/W O O O DIM A B C D E F G H I J K L I J K L MINIMUM inches / mm MA
Datasheet
4
UHBS60-1

Advanced Semiconductor
NPN SILICON RF POWER TRANSISTOR



• Omnigold™ Metalization System .115 .430 D E .125 G F H I J K L A .040x45° 4X .025 R C B 2XØ.130 MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O 9.0 A 50 V 26 V 50 V 4.0 V 190 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.9 OC/W
Datasheet
5
UHBS60-2

Advanced Semiconductor
NPN SILICON RF POWER TRANSISTOR



• Omnigold™ Metalization System PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E C B 2XØ.130 MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O .125 G H I F 9.0 A 50 V 26 V 50 V 4.0 V 190 W @ TC = 25 OC -65 C to +200 C
Datasheet
6
UHBS30-1

Advanced Semiconductor
NPN SILICON RF POWER TRANSISTOR



• Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 9.0 A 50 V 30 V 4.0 V 100 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 1.5 OC/W O O DIM A B C D E F G H I J K L MINIMUM inches / mm J K MAXIMUM inches /
Datasheet
7
UHBS30-2

Advanced Semiconductor
NPN SILICON RF POWER TRANSISTOR



• Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O I J K L 9.0 A 50 V 30 V 50 V 4.0 V 100 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.5 OC/W O O O O DIM A B C D E F G H I J K L MINIMUM inches / mm
Datasheet



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