| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel Enhancement mode Very low on-resistance @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant VSD140N15MD 150V/10A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V I |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • 175 MHz 12.5 V • PG = 5.0 dB at 150 W/175 MHz • Omnigold™ Metalization System • Common Emitter configuration D 3 1 2x Ø N FULL R 2 B G .725/18,42 F E 4 MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 22 A 36 V 18 V 36 V 4.0 V 350 W @ |
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Vanguard Semiconductor |
150V/10A N-Channel Advanced Power MOSFET N-Channel Enhancement mode Very low on-resistance @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant VSD140N15MS 150V/10A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V I |
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Advanced Semiconductor |
NPN Silicon RF Power Transistor INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC 25 A 60 V 300 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.55 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICES hFE COB POUT GP |
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Vanguard Semiconductor |
P-Channel Advanced Power MOSFET P-Channel，-5V Logic Level Control Very low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching Enhancement mode 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD100P10MS -100V/-17A P-Channel Advanced Power MOSFET V DS R @DS(o |
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Advanced Semiconductor |
NPN SILICON HIGH FREQUENCY TRANSISTOR RTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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Advanced Semiconductor |
NPN Silicon RF Power Transistor INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching MAXIMUM RATINGS IC VCB PDISS TJ T STG θ JC 155 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 1.15 OC/W CHARACTERISTICS SYMBOL BV CEO BV CBO BV EBO hFE COB GP Gp IMD3 IC = |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR INCLUDE: • Gold Metalization • Input Matching • Low Thermal Resistance PACKAGE STYLE 250 2L FLG (A) MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 1.0 A 45 V 21.9 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +150 °C 8.0 °C/W 1 = COLLECTOR 2 = EMITTER 3 = |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching Pb-free lead plating; RoHS compliant VSD160N10MS 100V/8A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5 V ID 100 V 150 |
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Advanced Semiconductor |
NPN Silicon RF Power Transistor • Class C Operation • PG = 9.0 dB at 150 W/108 MHz • Omnigold™ Metalization System E C Ø.125 NOM. C B B E D G F K MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC O O E H 16 A 60 V 25 V 60 V 4.0 V 230 W @ TC = 25 C -65 C to +200 C -65 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance PACKAGE STYLE 250 2L FLG (A) MAXIMUM RATINGS IC VCES PDISS TJ T STG θ JC 2.5 A 55 V 125 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 1.4 C/W O 1 = COLLECTOR 2 = EMITTER 3 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 8.2 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 20 W (PEP) • Omnigold™ Metalization System • Emitter Ballasting E B F MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 30 W @ TC = 25 °C -65 °C to +200 °C -65 °C t |
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Advanced Semiconductor |
NPN Silicon RF Power Transistor INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching PACKAGE STYLE .450 BAL FLG.(A) MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC O O 8.0 A 45 V 155 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 1.15 C/W O O O O CHARACTERISTICS SYMBOL |
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Advanced Semiconductor |
NPN Silicon RF Power Transistor INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC 310 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.55 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICES hFE COB POUT GP nC IC |
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Advanced Semiconductor |
RF AND MICROWAVE TRANSISTORS INCLUDE: • Gold Metalization • Input Matching • Common Emitter • Emitter Ballast Resistors PACKAGE STYLE .230 6L FLG MAXIMUM RATINGS IC VCBO VCES PDISS TJ T STG θ JC 5.0 A 50 V 45 V 43 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 3.0 OC/W 1,3 |
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