| No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • Class C Operation • PG = 13 dB at 1.0 W/400 MHz • Omnigold™ Metalization System B C E B D C J E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 2.0 A 45 V 25 V 3.5 V 31.8 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 20 °C/W DIM A B C |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 1.25 A 45 V 14 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +200 °C 12 °C/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BV |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR INCLUDE: • Gold Metalization • Diffused Ballast Resistors • Common Emitter E B D C E J E F I MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 5.0 A DIM MINIMUM inches / mm G H K #8-32 UNC MAXIMUM inches / mm 30 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 12 dB min. • POUT = 10 W • 28 V, 175 MHz • Omnigold™ Metalization System F B .112 x 45° A E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCES VCEO VEBO PDISS TJ TSTG θJC 1.25 A 65 V 35 V 4.0 V 20 W @ TC = 25 °C -65 °C to +200 ° |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold™ Metalization System B C E ØC E B D H I J MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG θJC 8.0 A 60 V 4.0 V 85 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.1 °C/W DIM A B C D E F |
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