| No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System B .112 x 45° A E B C E C D E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS F IC VCBO VCEO VCES VEBO PDISS TJ T STG θ JC O 1.0 A 65 V 35 V 65 V 4.0 V |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System .112x45° A B C E ØC E B H I J MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ T STG θ JC O O D 1.0 A 65 V 35 V 65 V 4.0 V 13.0 W @ TC = 25 C -65 |
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