| No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 20 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 C -65 OC to |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 20 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCB VCE VEBO PDISS TJ T STG θ JC O O #8-32 UNC-2A F E G 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 OC -65 |
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