Advanced Semiconductor 2N3 fiche technique

No.	Partie #	Fabricant	Description
1	2N3375	Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR INCLUDE: • Isolated Package MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 1.5 A 40 V 11.6 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 15 C/W O O O O 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS SYMBOL BVCEO BVCEX BVCBO ICEO IEBO hFE VCE(SA
2	2N3563	Advanced Semiconductor	NPN Epoxy - RF / IF Oscillator
3	2N3866	Advanced Semiconductor	NPN SILICON HIGH FREQUENCY TRANSISTOR Specifications are subject to change without notice. REV. A 1/1
4	2N3742	Advanced Semiconductor	Silicon Transistors
5	2N3644	Advanced Semiconductor	(2N3xxx) Silicon Transistors
6	2N329	Advanced Semiconductor	(2N3xxx) Silicon Transistors
7	2N31xx	Advanced Semiconductor	(2N3xxx) Silicon Transistors
8	2N36xx	Advanced Semiconductor	(2N3xxx) Silicon Transistors
9	2N3570	Advanced Semiconductor	NPN SILICON HIGH FREQUENCY TRANSISTOR Specifications are subject to change without notice. REV. A 1/1
10	2N32xx	Advanced Semiconductor	(2N3xxx) Silicon Transistors
11	2N35xx	Advanced Semiconductor	(2N3xxx) Silicon Transistors
12	2N37xx	Advanced Semiconductor	(2N3xxx) Silicon Transistors