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Advanced Power Technology |
RF& MICROWAVE TRANSISTORS • • • • • • 2.7 – 3.1 GHz 40 VOLTS POUT = 25 WATTS GP = 6.2 dB MINIMUM GOLD METALLIZATION INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION • DESCRIPTION: The MS2604 is a silicon NPN bipolar transistor designed for pulsed S-Band radar applications. T |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • • • • • • 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: The MS2204 is a common emitter, silicon NPN, microwave transistor designed |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • • • • • 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 4LSL (M115) Epoxy Sealed DESCRIPTION: The MS2206 is a common base, silicon NPN microwave transistor |
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Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • • • • • • • 255 MHz BANDWIDTH GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 300W MINIMUM Gp = 7.0 dB LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING 15:1 VSWR CAPABILITY DESCRIPTION: The MS2210 avionics power transistor is a broadband, high peak |
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Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS • • • • • • 500 Watts @ 250 µ Sec Pulse Width, 10% Duty Cycle Refractory Gold Metallization Emitter Ballasting And Low Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions Input Matched, Common Base Con |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • • • • • • GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 85 W MINIMUM Gp = 7.5 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2214 is a silicon NPN bipolar transistor designed for avionics applicat |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING POUT = 250 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2267 is a high power Class C NPN transistor specifically designed for |
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Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS • • • • • • 350 WATTS @ 10µ SEC PULSE WIDTH, 10% DUTY 300 WATTS @ 250µ SEC PULSE WIDTH 10% DUTY CYCLE 9.5 DB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • • • • • • 1025 - 1150 MHz 35 VOLTS INPUT MATCHING POUT = 2.0 WATTS GP = 9.0 dB MINIMUM LOW THERMAL RESISTANCE COMMON BASE CONFIGURATION DESCRIPTION: The MS2202 is a low power Class C NPN transistor specifically designed for avionics driver appli |
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Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • • • • • • 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave transistor designed |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS • • • • • • • 1090 MHz 50 VOLTS 15:1 VSWR CAPABILITY INPUT / OUTPUT MATCHING POUT = 400 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driv |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION • • • • • 1090 MHz COMMON BASE GOLD METALLIZATION CLASS C POUT = 500 W MIN. WITH 8.5 dB GAIN DESCRIPTION: THE MS2208 IS A SILICON NPN BIPOLAR DEVICE SPECIFICALLY DESIGNED FOR PULSED POWER APPLICATIONS AT 1090 MHz. GOLD METALLIZATION AND EMITTER BALL |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS · · · · · · 960 – 1215 MHz 28 VOLTS INPUT/OUTPUT MATCHING POUT = 15 WATTS GP = 8.1 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2212 is designed for specialized avionics applications, including JTIDS where power is provided under pulse |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS · · · · · · · GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 70 W MINIMUM Gp = 6.7 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2223 is a silicon NPN bipolar transistor designed for avionics applic |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS • • • • • • 1090 MHz 50 VOLTS POUT = 75 WATTS GP = 9.2 dB MINMUM 10:1 VSWR CAPABILITY COMMON BASE CONFIGURATION DESCRIPTION: The MS2228 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator puls |
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Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS L-BAND APPLICATIONS • • • • • • • REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT / OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 100 W MIN. GP = 6.0 dB GAIN DESCRIPTION: The MS2231 is a high-power Class C transistor specifical |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS The MS2092 is an internally matched, common base silicon bipolar device optimized pulsed application in the 600 – 750 MHz frequency range. Housed in the industry standard AMPAC™ metal/ceramic package, this device uses a refractory/gold overlay die g |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS www.DataSheet4U.com • DESIGNED • • • • • • • • • • FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.) IFF 1030 – 1090 MHz 300 W (min.) DME 1025 – 1150 MHz 290 W (typ.) TACAN 960 – 1215 MHz 960 – 1215 MHz GOLD METALLIZATION POUT = 3 |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS www.DataSheet4U.com • DESIGNED • • • • • • • • • • FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.) IFF 1030 – 1090 MHz 300 W (min.) DME 1025 – 1150 MHz 290 W (typ.) TACAN 960 – 1215 MHz 960 – 1215 MHz GOLD METALLIZATION POUT = 3 |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS www.DataSheet4U.com • 600 W (typ.) IFF 1030 – 1090 MHz • 550 W (min.) DME 1025 – 1150 MHz • 1025 - 1150 MHz • POUT = 550 WATTS • GP = 5.6 dB MINIMUM • GOLD METALLIZATION • INTERNAL INPUT/OUTPUT |
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