| No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Power Technology |
NPN SILICON HIGH-FREQUENCY TRANSISTOR • High Gain –Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA • Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz • High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz • State –of –the –Art Technology Fine Line Geometry Ion –Implanted Arsenic Emitters Gold Top Metallizat |
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Advanced Power Technology |
NPN SILICON HIGH-FREQUENCY TRANSISTOR • High Gain –Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA • Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz • High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz • State –of –the –Art Technology Fine Line Geometry Ion –Implanted Arsenic Emitters Gold Top Metallizat |
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