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Advanced Power Technology |
N-Channel Power MOSFET ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) MIN 1000 18 |
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Advanced Power Technology |
LINEAR MOSFET 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 50 |
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Advanced Power Technology |
LINEAR MOSFET he Energy 4 -55 to 150 300 49 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 |
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Advanced Power Technology |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 250 ±100 2 4 nA Volts TH |
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Advanced Power Technology |
N-Channel MOSFET 0V, 0.5 ID [Cont.]) IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(TH) Gate Threshold Voltage (VDS = |
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Advanced Power Technology |
N-Channel MOSFET Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 250 ±100 2 4 nA Volts THERMA |
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Advanced Power Technology |
LINEAR MOSFET 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 50 |
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Advanced Power Technology |
LINEAR MOSFET Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN TYP MAX UNIT Volts A |
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Advanced Power Technology |
LINEAR MOSFET he Energy 4 -55 to 150 300 49 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 |
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Advanced Power Technology |
LINEAR MOSFET he Energy 4 -55 to 150 300 49 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 |
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Advanced Power Technology |
LINEAR MOSFET e Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN TYP MAX UNIT Vo |
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Advanced Power Technology |
LINEAR MOSFET he Energy 4 -55 to 150 300 49 50 3000 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 |
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