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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 1 4 2 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: www.DataSheet4U.com The 2N5031 |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Silicon NPN, TO-72 packaged VHF/UHF Transistor Low Noise, NF = 4.5 dB (max) @ 200 MHz High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc Characterized with S-Parameters 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIP |
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Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: www.DataSheet4U.com The 2N5109 is a silicon NPN tr |
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