| No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Power Technology |
bipolar transistor .5 45 10:1 TYP MAX UNITS W W dB % FUNCTIONAL CHARACTERISTICS @ 25°C BVebo Emitter to Base Breakdown Ie = 5 mA BVces Collector to Emitter Breakdown Ic = 15mA Hfe DC Current Gain Vce = 5V, Ic = 100 mA Cob Output Capacitance Vcb = 50 V, f = 1 MHz Therm |
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Advanced Power Technology |
50 Volts Pulsed Avionics at 1030 MHz eturn Loss Rise Time Pulse Droop Load Mismatch Tolerance 1 TEST CONDITIONS F = 1030 MHz, Vcc = 50 Volts Note 2 MIN 1000 8.9 45 11 TYP MAX UNITS W dB % dB F = 1030 MHz, Vcc = 50 Volts Note 2 4.0:1 100 0.7 nS dB FUNCTIONAL CHARACTERISTICS @ 25 |
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