| No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET rage Temperature Range Operating Junction Temperature Range 320 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.0 62 Unit ℃/W ℃/W 200430071-1 |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET hj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 62 Unit /W /W 1 200907281 Data & specifications subject to change without notice IRF830I-HF Electrical Characteristics@Tj=25 C(un |
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Samsung Electronics |
Advanced Power MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ctor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 320 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Res |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 101 4.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 3.6 65 Unit ℃/W ℃/W 201024071-1/4 Data & specifications subject to change without notice IRF840I Electrical Characteristics@Tj=25 C(unless otherwise specified) Sym |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET al Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice Rating 400 ±20 5.5 3.5 22 74 0.59 152 5.5 -55 to 150 -55 to 150 Units V V A A |
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Samsung Electronics |
Advanced Power MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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