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Advanced Power Electronics |
AP15N03H on-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 200227032 AP15N03H/J Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj P |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET orage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 2.8 62.5 Units ℃/W ℃/W Data and sp |
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Advanced Power Electronics |
N-Channel MOSFET ain Current, VGS @ 10V3,4 Pulsed Drain Current1 +20 V 10 A 6.5 A 24 A PD@TC=25℃ Total Power Dissipation 31.2 W PD@TA=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy5 1.92 W 5 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ |
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Advanced Power Electronics |
AP18P10GH |
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Advanced Power Electronics |
AP15N03K l Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 200227032 www.DataSheet4U.com www.DataSheet4U.com AP15N03H/J Electrical Characteristics@T j |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET thout notice 200606051-1/4 AP1332GEU Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 21 53 |
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Advanced Power Electronics |
AP15N03GH nction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 200227032 Free Datasheet http://www.datasheet-pdf.com/ AP15N03GH/J Electrical Characteristics@T j=25oC(unl |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 96 0.77 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-am |
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Advanced Power Electronics |
2A SINK/SOURCE BUS TERMINATION REGULATOR Ideal for DDR-I, DDR-II and DDR-III VTT Applications Sink and Source up to 2Amp Integrated Power MOSFETs Generates Termination Voltage for SSTL_2, SSTL_18, HSTL, SCSI-2 and SCSI-3 Interfaces. High Accuracy Output Voltage at Full-Load Output Adjustmen |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET e Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.5 62.5 Units ℃/W ℃/W Data and specif |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 150 -40 to 150 Units V V A A A A W W W mJ A ℃ ℃ Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data R |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET rent 1 3 3 4 Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current 4 Single Pulse Avalanche Energy Storage Temperature Range 28.8 24 -40 to 150 -40 to 150 Operating Junction Temperatur |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET dv/dt Ruggedness (VDS = 0 …400V ) +20 13 8.2 32 50 V A A A V/ns PD@TC=25℃ PD@TA=25℃ EAS dv/dt Total Power Dissipation Total Power Dissipation4 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 89.2 W 2W 108 mJ 15 V/ns TSTG Storage Tem |
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Advanced Power Electronics |
1.5A / 3A Bus Termination Regulator ▼ Ideal for DDR-I and DDR-II applications ▼ Capable of sourcing and sinking current 1.5A/3A ▼ Current limiting protection ▼ Thermal protection ▼ Current-shoot-through protection ▼ High accuracy output voltage at full load ▼ Minimum external componen |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 200227032 www.DataSheet4U.com AP15N03GH/J Electrical Characteristics@T j=25oC(unless |
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Advanced Power Electronics |
AP18T10AGH e Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.5 62.5 Units ℃/W ℃/W Data and specif |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET rmal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.3 62.5 110 Units ℃/W ℃/W ℃/W 1 200910084 Maximum Thermal Resistance, Junction-ambient Dat |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET nce, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.0 65 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200810031 AP15P15GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS R |
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