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Advanced Power Electronics |
AP72T02GH Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a . Maximum Thermal Resistance, Jun |
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Advanced Power Electronics |
AP72T03GH emperature Range BVDSS RDS(ON) ID 30V 9mΩ 62A GD S TO-252(H) G D S TO-251(J) Rating 30 + 20 62 44 190 60 0.4 29 24 -55 to 175 -55 to 175 Units V V A A A W W/℃ mJ A ℃ ℃ Thermal Data Symbol . Rthj-c Maximum Thermal Resistance, Junction-cas |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET J A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a . Maximum Th |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.1 62 Units °C/W °C/W Ordering Information AP72T03GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube) ©2010 Advanced Powe |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET issipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a . Maximum Thermal Resistance, Junc |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET J A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a . Maximum Th |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET . Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.1 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 201001072 AP72T03GP Electrical Characteristics@Tj=25oC(unless otherwise |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET n Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 30 + 20 65 47 190 70 -55 to 175 -55 to 175 V V A A A W ℃ ℃ Thermal Data Symbol . Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximu |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET issipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a . Maximum Thermal Resistance, Junc |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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