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Advanced Power Electronics 276 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
2761I-A

Advanced Power Electronics
AP2761I-A
rgy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 65 Units ℃/W ℃/W Data & speci
Datasheet
2
AP2762I-A

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.8 65 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 20071231pre AP2762I-A Electrical Characteristics@Tj=2
Datasheet
3
AP2761I-A

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
e Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 65 Units
Datasheet
4
AP2761I-H-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ating Junction Temperature Range 18 6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W Data & specifications subject
Datasheet
5
AP2764I-A-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
36 37 40 9 -55 to 150 -55 to 150 Units V V A A A W mJ A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without n
Datasheet
6
AP2761R-A

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Drain Current 1 Rating 650 ±30 10 4.4 18 104 0.8 10 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ A ℃ ℃ Total Power Dissipation Linear Derating Factor Avalanche Current 2 Storage Temperature Range Operating Junction Temperature Range Thermal Data
Datasheet
7
AP2762S-A-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
e Range 18 6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 1.35 40 Unit ℃/W o C/W 1 Data & specifications subject to
Datasheet
8
AP2764I-A

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ature Range 40 9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W Data & specifications subject to change without no
Datasheet
9
AP2763I-A-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
n Current, VGS @ 10V4 Drain Current, VGS @ 10V4 Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range 750 +30 8 5 30 50 18 -55 to 150 -55 to 150 V V A A A W mJ ℃
Datasheet
10
AP2761P-A

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ce Junction-ambient Max. Max. Value 1.2 62 Units ℃/W ℃/W Data & specifications subject to change without notice 200705051-1/4 www.DataSheet4U.com AP2761P-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o
Datasheet
11
AP2763I-A

Advanced Power Electronics
N-Channel Enhancement Mode Power MOSFET
anche Current Storage Temperature Range Operating Junction Temperature Range 32 8.0 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.5 6
Datasheet
12
AP2761I-H

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ting Junction Temperature Range 18 6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W Data & specifications subject
Datasheet
13
AP2761S-A-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
V GS @ 10V Pulsed Drain Current 1 Rating 650 +30 10 4.4 18 104 0.8 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Tempe
Datasheet
14
AP2762JB-A-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-amb
Datasheet
15
AP2762JB-H-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
0 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Therm
Datasheet
16
AP2764AI-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ting Junction Temperature Range 32 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W 1 200901202 Data & specificati
Datasheet
17
AP2762I-H-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
d Drain Current 1 Rating 700 +30 7 24 33 2 Units V V A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 18 6 -55 to 150 -55 to 150 Thermal Data Sy
Datasheet
18
AP2762R-A-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
5 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.35 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200810023 AP2762R-A-HF
Datasheet
19
AP2765I-A-HF

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
W ℃ ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 65 Units ℃/W ℃/W 1 201003031 Data & specifications subject to change without notice Downloaded from
Datasheet
20
AP2764AP-A

Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
erature Range 32 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.2 62 Units ℃/W ℃/W Data & specifications subject to change without
Datasheet



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