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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET its V V A A A W W/ ℃ W ℃ ℃ Total Power Dissipation Linear Derating Factor Total Power Dissipation 3 2 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 7 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient M |
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Advanced Power Electronics |
AP18N20GH Source Voltage 200 V + 20 V ID@TC=25℃ Drain Current, VGS @ 10V 18 A ID@TC=100℃ IDM Drain Current, VGS @ 10V Pulsed Drain Current1 9.5 A 60 A PD@TC=25℃ Total Power Dissipation 89 W PD@TA=25℃ Linear Derating Factor Total Power Dissipation3 |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET GS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 200 +20 18 9.5 60 34.7 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET e, Junction-ambient Data and specifications subject to change without notice Value 0.833 40 Units ℃/W ℃/W 1 201104123 AP18N50W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Uni |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 0 89 0.7 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistanc |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET @TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation +20 V 18 A 9.5 A 60 A 89 W Linear Derating Factor 0.7 W/℃ TSTG TJ Storage Temperature Range Ope |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET @TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation +20 V 18 A 9.5 A 60 A 89 W Linear Derating Factor 0.7 W/℃ TSTG TJ Storage Temperature Range Ope |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET perature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.4 40 Units ℃/W ℃/W 1 201011091 Data & spe |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET its V V A A A W W/ ℃ W ℃ ℃ Total Power Dissipation Linear Derating Factor Total Power Dissipation 3 2 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET o 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET o 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 7 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient M |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET er Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.6 65 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200805264 AP18N20GI Electrical Characteristics@Tj=25oC(unless otherwise |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET d Drain Current1 10 A 80 A PD@TC=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy2 150 W 200 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 0 89 0.7 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistanc |
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