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Advanced NE6 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
NE64535

Advanced
NPN SILICON LOW NOISE RF TRANSISTOR
INCLUDE:
• NF = 1.6 dB Typical @ 2 GHz
• S21E2 = 11 dB Typical @ 2 GHz
• Hermetic Ceramic Package MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 60 mA 25 V 12 V 1.5 V 300 mW @ TA ≤ 75 C O -65 °C to +200 °C -65 °C to +150 °C 85 °C/W TC = 25
Datasheet



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