| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
ATMEL |
AT28HC256 • Fast Read Access Time – 70 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum – 1 to 64-byte Page Write Operation • L |
|
|
|
|
ATMEL Corporation |
256K (32K x 8) High-speed Parallel EEPROM • Fast Read Access Time – 70 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum – 1 to 64-byte Page Write Operation • L |
|
|
|
|
ATMEL Corporation |
64K (8K x 8) High-speed Parallel EEPROM • Fast Read Access Time – 70 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option – Ref. AT28HC64BF Datasheet) – 1 to 64-b |
|
|
|
|
ATMEL Corporation |
High-speed Parallel EEPROM • Fast Read Access Time – 90 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms Maximum – 1 to 64-byte Page Write Operatio |
|
|
|
|
ATMEL Corporation |
64K (8K x 8) High Speed Parallel EEPROM • Fast Read Access Time – 70 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times – Page Write Cycle Time: 2 ms Maximum (Standard) – 1 to 64-byte Page Write Operation • Low Power Dissipation – |
|