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ASI PT9 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
PT9701B

ASI
NPN SILICON RF POWER TRANSISTOR
INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain MAXIMUM RATINGS IC VCES PDISS TJ T STG θ JC 1.25 A 45 V 14 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 12 OC/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CEO
Datasheet



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