logo

ASI MT5 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
MT5C2565

ASI
64K x 4 SRAM MEMORY ARRAY




• High Speed: 12, 15, 20, 25, 35, and 45ns Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are
Datasheet
2
MT5C2564

ASI
SRAM




• High Speed: 15, 20, 25, 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs a
Datasheet
3
MT5C6405

ASI
16K x 4 SRAM SRAM MEMORY ARRAY

• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatib
Datasheet
4
MT5C1008

ASI
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS






• High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS process Single +5V (+10%) Power Supply Easy memory expansion with CE1\, CE2, and OE\ options.
• All inpu
Datasheet
5
MT5C1001

ASI
SRAM







• High Speed: 20, 25, 35, and 45 Battery Backup: 2V data retention Low power standby Single +5V (+10%) Power Supply Easy memory expansion with CE\ and OE\ options. All inputs and outputs are TTL compatible Three-state output 32-Pin Flat
Datasheet
6
MT5C6408

ASI
8K x 8 SRAM

• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1\ and CE2
• All inputs and outputs are TTL
Datasheet
7
MT5C6404

ASI
16K x 4 SRAM SRAM MEMORY ARRAY

• Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
Datasheet
8
MT5C1005

ASI
SRAM MEMORY ARRAY




• High Speed: 20, 25, 35, and 45 Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\ and OE\ options.
• All inputs and outpu
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact