| No. | Partie # | Fabricant | Description | Fiche Technique |
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ASI |
NPN SILICON RF POWER TRANSISTOR • POUT = 5.0 W Typ. at 3 GHz • Common Base Configuration • Omnigold™ Metellization System MAXIMUM RATINGS IC 700 mA VCB PDISS TJ 30 V 17 W @ TC = 25 OC -65 OC to +200 OC TSTG -65 OC to +200 OC θJC 8.5 OC/W PACKAGE STYLE .250 2L FLG A C ØD |
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ASI |
NPN SILICON RF POWER TRANSISTOR • Replacement for MSC81250M Hi-Rel • 168 Hour Burn-In • Internal Input/Output Matching Networks • PG = 6.2 dB at 250 W/1150 MHz • Omnigold™ Metalization System G H I J K P M D IM A B C M IN IM U M inches / m m L N M A X IM U M inches / m m .0 2 |
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ASI |
NPN SILICON RF POWER TRANSISTOR |
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