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ETC |
SILICON NPN TRASISTORS With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current-Continuous Total Power |
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ASI |
NPN SILICON RF POWER TRANSISTOR • PG = 13 Typ. min. at 100 W/28 MHz • IMD3 = -24 dBc max. at 100 W(PEP) • Omnigold™ Metalization System E C Ø.125 NOM. C B B E H D G F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 25 A 45 V 18 V 4.0 V 250 W @ TC = 25 °C -65 °C to +17 |
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ASI |
2SC2904 • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 22 A VCBO 50 V VCEO 20 V VEBO 4.0 V PDISS 200 W @ TC = 25 °C TJ -55 °C to +175 °C TSTG -55 °C to +175 °C θJC 0.75 °C/W |
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ASI |
NPN SILICON RF POWER TRANSISTOR |
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ASI |
NPN SILICON RF POWER TRANSISTOR INCLUDE: • • • Replaces Original 2SC1972 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC VCBO PDISS TSTG θJC 3.5 A 35 V 25 W @ TC = 25 °C -55 °C to +17 |
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ASI |
NPN SILICON RF POWER TRANSISTOR • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System D FU LL R B G .725/18,42 F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 22 A 50 V 20 V 4.0 V 200 W @ TC = 25 °C -55 °C to +175 °C -55 °C t |
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ASI |
NPN SILICON RF POWER TRANSISTOR • 175 MHz 12.5 V • PG = 6.4 dB at 80 W/175 MHz • Omnigold™ Metalization System • Common Emitter configuration DIM A B C .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 D E F G H I J K L M N .120 / 3.05 .970 / 24.64 .090 / 2.29 .150 / 3 |
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ROHM |
Quasi-resonant AC/DC Converter Long Time Support Product for Industrial Applications 6 Pins: TO220-6M Package Built-in 1700 V/4 A/1.12 Ω SiC-MOSFET Quasi-resonant Type (Low EMI) Frequency Reduction Function Low Current Consumption (19 µA) during Standby Burst Operati |
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ROHM |
Quasi-resonant AC/DC Converter Long Time Support Product for Industrial Applications 6 Pins: TO220-6M Package Built-in 1700 V/4 A/1.12 Ω SiC-MOSFET Quasi-resonant Type (Low EMI) Frequency Reduction Function Low Current Consumption (19 µA) during Standby Burst Operati |
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ROHM |
Quasi-resonant AC/DC Converter Long Time Support Product for Industrial Applications 6 Pins: TO220-6M Package Built-in 1700 V/4 A/1.12 Ω SiC-MOSFET Quasi-resonant Type (Low EMI) Frequency Reduction Function Low Current Consumption (19 µA) during Standby Burst Operati |
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ROHM |
Quasi-resonant AC/DC Converter Long Time Support Product for Industrial Applications 6 Pins: TO220-6M Package Built-in 1700 V/4 A/1.12 Ω SiC-MOSFET Quasi-resonant Type (Low EMI) Frequency Reduction Function Low Current Consumption (19 µA) during Standby Burst Operati |
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