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ASI |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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ASI |
NPN SILICON RF POWER TRANSISTOR INCLUDE: • Emitter Ballasting • Gold Metalization • 3/8" SOE Stud Package MAXIMUM RATINGS IC 3.0 A VCE 35 V VCB PDISS TJ TSTG θJC 65 V 30 W @ TC = 25 OC -65 OC to + 200 OC -65 OC to + 150 OC 5.8 OC/W PACKAGE STYLE .380" 4L STUD 1 = COLLECTOR |
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ASI |
NPN SILICON RF POWER TRANSISTOR • Common Emitter • PG = 9.0 dB at 2.0 W/470 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 0.8 A VCBO 36 V VCEO 16 V VEBO 4.0 V PDISS 15 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 11.6 °C/W PACKAGE STYLE |
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ASI |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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ASI |
NPN SILICON RF POWER TRANSISTOR • Minimum Gain = 7.6 dB • Output Power = 40 W • Omnigold™ Metalization System www.DataSheet4U.com E B I J D H #8-32 UNC-2A G F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 5.0 A DIM MINIMUM inches / mm MAXIMUM inches / mm 65 V 35 V |
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