logo

ASEMI MBR DataSheet

No. Partie # Fabricant Description Fiche Technique
1
MBR2060CT

ASEMI
High-Voltage Schottky Diodes
age Change ( at Rated VR ) Peak Repetitive Reverse Surge Current (2uS-1Khz) Operating Junction Temperature Storage Temperature Electricity Character Item Test Condition IR TJ =25℃ TJ =125℃ VR=VRRM VF TJ =25℃ TJ =125℃ IF=10A IF=10A *IF(AV)=
Datasheet
2
MBR2060FCT

ASEMI
High-Voltage Schottky Diodes
age Change ( at Rated VR ) Peak Repetitive Reverse Surge Current (2uS-1Khz) Operating Junction Temperature Storage Temperature Electricity Character Item Test Condition IR TJ =25℃ TJ =125℃ VR=VRRM VF TJ =25℃ TJ =125℃ IF=10A IF=10A *IF(AV)=
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact