| No. | Partie # | Fabricant | Description | Fiche Technique |
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ART CHIP |
N-CHANNEL MOSFET * RDS(ON) = 3.8Ω@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Pb-free plati |
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ART CHIP |
N-CHANNEL MOSFET * RDS(ON) = 3.8Ω@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Pb-free plati |
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