डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
8N65 | N-Channel Mosfet Transistor isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
8N65
·FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) |
Inchange Semiconductor |
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8N65 | N-CHANNEL MOSFET 8N65(F,B,H)
8A mps,650 Volts N-CHANNEL MOSFET
FEATURE
8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220A |
CHONGQING PINGYANG |
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8N65 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
8N65
8A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching t |
Unisonic Technologies |
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8N65-ML | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
8N65-ML
8A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION The UTC 8N65-ML is a high voltage power MOSFET combines
advanced trench MOSFET designed to have better characteristics, su |
UTC |
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8N65B | N-CHANNEL MOSFET 8N65(F,B,H)
8A mps,650 Volts N-CHANNEL MOSFET
FEATURE
8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220A |
CHONGQING PINGYANG |
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8N65F | N-CHANNEL MOSFET 8N65(F,B,H)
8A mps,650 Volts N-CHANNEL MOSFET
FEATURE
8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220A |
CHONGQING PINGYANG |
|
8N65H | N-CHANNEL MOSFET 8N65(F,B,H)
8A mps,650 Volts N-CHANNEL MOSFET
FEATURE
8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220A |
CHONGQING PINGYANG |
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