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4N60AF DataSheet

No. Partie # Fabricant Description Fiche Technique
1
4N60AF

nELL
N-Channel Power MOSFET
RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-251 (I-PAK) (4N
Datasheet



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