| No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas |
2SB962 |
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Inchange Semiconductor |
Silicon PNP Power Transistor PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage VBE(sat)NOTE Base-Emitter Saturation Voltage IEBO Emitter Cutoff Current ICBO Collector Cutoff Current hFE1NOTE DC Current Gain hFE2NOTE DC Current Ga |
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Kexin |
PNP Transistor ● Low collector to emitter saturation voltage VCE(sat). + 1.50 0.15 -0.15 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm 3.80 + 5.55 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.25 2 .6 5 -0.1 + 0.15 0 .5 0 -0.15 + 0 |
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Renesas |
PNP Transistor • Low VCE(sat): VCE(sat) = −0.3 V TYP. PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 5.6 ±0.3 9.5 ±0.5 5.5 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Co |
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