| No. | Partie # | Fabricant | Description | Fiche Technique |
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NEC |
PNP SILICON TRANSISTOR • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipations (TA = 25°C) Total Power Dissipation −55 to +150°C +150° |
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GME |
Silicon Epitaxial Planar Transistor Excellent hFE Linearity. Power dissipation：PD=250mW. High hFE. Pb Lead-free 2SA733 APPLICATIONS Designed for use in driver stage of amplifier. ORDERING INFORMATION Type No. Marking 2SA733 CS SOT-23 Package Code SOT-23 MAXIMUM RATING |
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BLUE ROCKET ELECTRONICS |
Silicon PNP transistor hFE 、。 High hFE and excellent hFE linearity. / Applications 。 Driver stage of AF power amplifier. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE |
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MCC |
PNP Transistor • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Rating |
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MCC |
PNP Transistor • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55OC to +150OC • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Fr |
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DC COMPONENTS |
PNP EPITAXIAL PLANAR TRANSISTOR |
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SEMTECH |
PNP Transistor |
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Fairchild Semiconductor |
PNP Transistor • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68. September 2009 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol |
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SEMTECH |
PNP Silicon Epitaxial Planar Transistor ain Group R O Y P L Collector Base Breakdown Voltage at -IC=100μA Collector Emitter Breakdown Voltage at -IC=10mA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=60V Emitter Cutoff Current at -VEB=5V Collector Saturation V |
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Unisonic Technologies |
PNP Transistor * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SA733L-x-AE3-R 2SA733G-x-AE3-R SOT-23 2SA733L-x-AL |
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Kexin |
PNP Transistors Collector-Base Voltage: VCBO=-60V TTrraannssiissttoorrss PNP Transistors 2SA733 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 0.4 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 0.1 +0.05 -0.01 1.Base 2.Emitter |
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LZG |
SILICON PNP TRANSISTOR High hFE and excellent hFE linearity. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -50 V VEBO -5.0 V IC -150 mA IB -20 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol |
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SeCoS |
PNP Transistor Complementary of the 2SC945 Collector to base voltage: -60V MARKING Product 2SA733 Marking Code CS CLASSIFICATION OF hFE Product-Rank 2SA733-L Range 120~220 PACKAGE INFORMATION Package MPQ SOT-23 3K RoHS Compliant Product A suffix of “-C” |
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Unisonic Technologies |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity *Complimentary to 2SC945 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-Base Volta |
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SeCoS Elektronische Bauelemente |
PNP Transistor Power dissipation G H TO-92 1Emitter 2Collector 3Base PACKAGE INFORMATION Weight: 0.2100g (Approximately) A J D B REF. Collector 2 K 3 Base E C F 1 Emitter A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.5 |
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MCC |
PNP Transistor • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55OC to +150OC • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Fr |
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MCC |
PNP Transistor • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55OC to +150OC • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Fr |
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MCC |
PNP Transistor • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55OC to +150OC • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Fr |
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BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
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