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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N7002 | N-channel MOSFET 2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 60V
RDS(ON) Max
5Ω @ VGS = 10V 7.5Ω @ VGS = 5V
ID Max TA = +25°C
210mA
170mA
Description and Applications
This MOSFET ha |
Diodes Incorporated |
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2N7002 | N-channel FET 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
August 2016
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
Features
• High Density Cell Desi |
Fairchild Semiconductor |
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2N7002 | N-Channel Power Mosfet Production specification
N-Channel Enhancement Mode Field Effect Transistor 2N7002
FEATURES
High Density Cell Design For Low
Pb
RDS(ON).
Lead-free
Voltage Controlled Small Signal Switch.
Rug |
GME |
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2N7002 | 300mA N-channel MOSFET 2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic pac |
nexperia |
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2N7002 | N-Channel MOSFET Features
• Advanced Trench Process Technology • Low Threshold Voltage • Fast Switching Speed • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” De |
MCC |
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2N7002 | N-channel MOSFET 2N7002
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Ther |
Microchip |
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2N7002 | N-Channel Enhancement Mode Power MOSFET 2N7002
N-Channel Enhancement Mode Power MOSFET
General Features
VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD Rating HBM 2300V
High power and current handing capability Lead free pro |
Rectron |
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