uPA831TF - Renesas

uPA831TF NPN SILICON EPITAXIAL TRANSISTOR

The µPA831TF has two different built-in transistors (Q1 c and Q2) for low noise amplification in the VHF band to UHF u band. d FEATURES • Low noise o Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. r @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain P Q1 : |S21e|2 = 9.0 dB TYP. Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • 6-pin thin-type small mini.

Features

• Low noise o Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. r @f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain P Q1 : |S21e|2 = 9.0 dB TYP. Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
• 6-pin thin-type small mini mold package d
• 2 different transistors on-chip (2SC4226, 2SC4227) e ON-CHIP TRANSISTORS 4 3 0.60±0.1 0.45 inu 3-pin small mini mold part No. Q1 2SC4226 Q2 2SC4227 t The µPA834TF features the Q1 and Q2 in inverted positions. n ORDERING INFORMATION o PART NUMBER c µPA831TF Dis µPA831TF-T1 QUANTITY PACKING STYLE Loose products (50 pcs) Taping products (3 kpcs/re.