The UPA602CT, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Two MOSFET circuits Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Infor.
Two MOSFET circuits
Directly driven by a 4.5 V power source.
Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
UPA602CT-T1-A/AT
-A : Sn-Bi , -AT : Pure Sn
3000p/Reel
SC-74 (6pMM)
Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking UB
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA602T |
NEC |
N-Channel MOSFET | |
2 | UPA603T |
NEC |
P-CHANNEL MOSFET | |
3 | uPA606CT |
Renesas |
N-CHANNEL MOSFET | |
4 | UPA606T |
NEC |
N-CHANNEL MOSFET | |
5 | UPA607T |
NEC |
P-Channel MOSFET | |
6 | UPA610TA |
NEC |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING | |
7 | UPA611TA |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING | |
8 | UPA621TT |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
9 | UPA622TT |
Renesas |
N-Channel MOSFET | |
10 | UPA650TT |
Renesas |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
11 | UPA672T |
NEC |
N-CHANNEL MOS FET ARRAY FOR SWITCHING | |
12 | UPA672T |
Renesas |
N-CHANNEL MOS FET ARRAY |