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nb10hsa08 - Nihon Inter Electronics

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nb10hsa08 Diode

10A Avg. 80Volts NB10HSA08 Schottky Barrier Diode DSE-13051(1/2) :(SBD) Construction : Schottky Barrier Diode : Application : High-Frequency Rectification SMD Tj=150℃ Feature Small SMD Lower Thermal-Resistance High Current Capability Tj=150℃ OUTLINE DRAWING Package : NB Dimension : mm ■ Weight : 0.06g(typ.) ■ Flammability : Epoxy Resin=UL94V-0.

Features

Conditions min. Peak Reverse Current IRM VRM=VRRM,Tj=25℃, Per diode - Peak Forward Voltage VFM IFM=5.0A,Tj=25℃,Per diode - Junction Capacitance Cj f=100kHz,VR=10V,Per diode Thermal Resistance Rth(j-l) Rth(j-a) Junction to Lead Junction to Ambient
*2(ガラエポ) -
*1 : カソードコモン/Common Cathode Operation
*2 : プリント /Glass-Epoxy Substrate Mounted (Soldering Land=2.0
*1.5mm,2.0
*3.5mm,Both Sides) typ. - - 135 - - max. 100 0.7 - 7 60 Units µA V pF ℃/W ℃/W
● 。
● The content specified herein is subject to change without notice. Date of issue:2013.9.25 NB10HSA08
■ Characteristi.

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