The iSSI solid-state isolator family provides powerful energy transmission over a galvanic isolation barrier to drive the gates of MOS-controlled power transistors, such as CoolMOS™, OptiMOS™, TRENCHSTOP™ IGBT, or CoolSiC™. The output side of the iSSI solid-state isolator family does not require a dedicated voltage supply to drive the power transistor's gate.
• Solid-state isolators using Infineon's coreless-transformer technology
• No isolated gate bias supply required for gate driving
• Perfect match for CoolMOS™, OptiMOS™, and TRENCHSTOP™ IGBT
• Low power, large input voltage range from 2.6 V to 3.5 V (internally clamped)
• High-impedance, CMOS input (buffered variants)
• High output voltage up to 18 V - no series or parallel configuration required for powerful gate
driving
• High output peak current of 185 µA (direct drive variants) or 400 mA (buffered variants)
• Fast turn-off for safe switches' SOA operation
• Temperature sensor and current s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | iSSI20R02H |
Infineon |
coreless transformer | |
2 | iSSI20R11H |
Infineon |
coreless transformer | |
3 | iSSI30R11H |
Infineon |
coreless transformer | |
4 | iSSI30R12H |
Infineon |
coreless transformer | |
5 | ISS104 |
WEJ |
Fast Switching Rectifiers | |
6 | ISS128 |
Toshiba |
(ISSxxx) Diode | |
7 | ISS133 |
ETC |
Switching diode | |
8 | ISS154 |
Toshiba |
(ISSxxx) Diode | |
9 | ISS181 |
Toshiba |
(ISSxxx) Diode | |
10 | ISS184 |
Toshiba |
(ISSxxx) Diode | |
11 | ISS226 |
Toshiba |
(ISSxxx) Diode | |
12 | IS-1009EH |
Intersil |
Radiation Hardened 2.5V Reference |