Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Low input current self protected low side MOSFET intended for Vin=5V applications. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch. Note: The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significa.
•
•
•
•
•
•
• Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input protection (ESD) Load dump protection (actively protects load) Low input current
SOT223
Ordering information
Device ZXMS6001N3TA Package SOT223 Part mark ZXMS6001 Reel size (inches) 7 Tape width (mm) 12 embossed Quantity per reel 1,000
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
www.DataSheet4U.com
ZXMS6001N3
Functional block diagram
D
Over Voltage Protection
IN
Human body ESD protection Over current.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ZXMS6002G |
Zetex Semiconductors |
N-Channel MOSFET |
|
| 2 | ZXMS6002GQ |
Diodes |
N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET |
|
| 3 | ZXMS6003G |
Zetex Semiconductors |
N-channel self protected enhancement mode IntelliFET MOSFET |
|
| 4 | ZXMS6003G |
Diodes |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET |
|
| 5 | ZXMS6003GQ |
Diodes |
N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET |
|
| 6 | ZXMS6004DG |
DIODES |
60V N-CHANNEL MOSFET |
|
| 7 | ZXMS6004DGQ |
Diodes |
60V N-CHANNEL MOSFET |
|
| 8 | ZXMS6004DGQ-13 |
DIODES |
60V N-CHANNEL MOSFET |
|
| 9 | ZXMS6004DN8 |
Diodes |
N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET |
|
| 10 | ZXMS6004DT8 |
Diodes Incorporated |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET |
|
| 11 | ZXMS6004DT8Q |
Diodes |
N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET |
|
| 12 | ZXMS6004FF |
Diodes Incorporated |
60V N-Channel MOSFET |
|