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This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features • Low on-resistance • 4.5V gate drive capability • SOT23 Applications • DC-DC Converters • Power management functions • Motor Control D G S Ordering information DEVICE ZXMN3F30FHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 30.
low onresistance achievable with 4.5V gate drive.
Features
• Low on-resistance
• 4.5V gate drive capability
• SOT23
Applications
• DC-DC Converters
• Power management functions
• Motor Control
D
G S
Ordering information
DEVICE ZXMN3F30FHTA
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
D
S
Device marking
KNA
G Top view
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN3F30FH
Absolute maximum ratings
Parameter Drain source voltage
Gate source voltage
Continous Drain Current @ VGS=4.5; TA=25°C(b) @ VGS=4.5; TA=70°C(b) @ VGS=4.5; TA=25°C(a.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ZXMN3F30FHTA |
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|
| 2 | ZXMN3F318DN8 |
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30V SO8 Asymmetrical dual N-channel MOSFET |
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| 3 | ZXMN3F318DN8TA |
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|
| 4 | ZXMN3F31DN8 |
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| 5 | ZXMN3A01 |
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| 6 | ZXMN3A01E6 |
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| 7 | ZXMN3A01F |
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30V N-Channel MOSFET |
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| 8 | ZXMN3A02N8 |
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30V N-CHANNEL ENHANCEMENT MODE MOSFET |
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| 9 | ZXMN3A02X8 |
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| 10 | ZXMN3A03E6 |
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30V N-Channel MOSFET |
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| 11 | ZXMN3A04DN8 |
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DUAL 30V N-CHANNEL MOSFET |
|
| 12 | ZXMN3A04K |
Diodes |
N-CHANNEL MOSFET |
|