ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Drain-gate voltage Continuous drain current at T amb =25°C Pulsed drain current Gate-source voltage Power dissipation at T amb =25°C Operating and storage temperature range www.Da.
• BVDSS = 100V
• Low Threshold
DEVICE MARKING
• 410
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-source voltage Drain-gate voltage Continuous drain current at T amb =25°C Pulsed drain current Gate-source voltage Power dissipation at T amb =25°C Operating and storage temperature range
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SYMBOL V DS V DGR ID I DM V GS P tot T j :T stg VALUE 100 100 170 680 ± 20 360 -55 to +150
SOT23
UNIT V V mA mA V mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Drain-source breakdown voltage Gate-source threshold voltage Gate-body leakage Z.
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1 | ZXM41N0F |
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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET | |
2 | ZXM240128A6 |
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4 | ZXM61N02F |
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5 | ZXM61N03F |
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6 | ZXM61P02 |
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7 | ZXM61P02F |
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8 | ZXM61P03 |
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9 | ZXM61P03F |
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10 | ZXM62N02E6 |
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11 | ZXM62N02E6 |
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12 | ZXM62N03E6 |
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