ZHCS756 - Zetex Semiconductors

ZHCS756 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT

SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- NOVEMBER 1997 FEATURES: • Low V F • High Current Capability APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA PARTMARK DETAIL: S76 7 1 ZHCS756 C 1 A 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ I.

Features

• Low V F
• High Current Capability APPLICATIONS:
• DC - DC converters
• Mobile telecomms
• PCMCIA PARTMARK DETAIL: S76 7 1 ZHCS756 C 1 A 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF = 750mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t ≤100 µs t≤10ms Power Dissipation at Tamb= 25° C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 750 610 1500 12 5 500 -55 to + 150 125 UNIT V mA mV mA A A mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb =.