SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1 - September 1997 FEATURES: • Low V F • High Current Capability APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA PARTMARK DETAIL: S56 7 1 ZHCS506 C 1 A 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @.
• Low V F
• High Current Capability APPLICATIONS:
• DC - DC converters
• Mobile telecomms
• PCMCIA PARTMARK DETAIL: S56 7
1
ZHCS506
C 1 A 3
2
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF = 500mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t ≤100 µs t≤10ms Power Dissipation at Tamb= 25° C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 500 630 1000 5.5 2.5 330 -55 to + 150 125 UNIT V mA mV mA A A mW °C °C
ELECTRICAL CHARACTERISTICS (at Tam.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ZHCS500 |
Diodes |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
2 | ZHCS500 |
Zetex Semiconductors |
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT | |
3 | ZHCS506Q |
Diodes |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
4 | ZHCS1000 |
Diodes |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
5 | ZHCS1000QTA |
Diodes |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
6 | ZHCS1006 |
Zetex Semiconductors |
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT | |
7 | ZHCS2000 |
Zetex Semiconductors |
40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE | |
8 | ZHCS2000 |
Diodes |
40V SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
9 | ZHCS350 |
Zetex Semiconductors |
SOD523 40V LOW VF SCHOTTKY BARRIER DIODE | |
10 | ZHCS350 |
Diodes |
40V SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
11 | ZHCS350Q |
DIODES |
40V SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
12 | ZHCS400 |
Zetex Semiconductors |
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT |