YG226S8 - ETC

YG226S8 FAST RECOVERY DIODE

YG226S8 (5A) FAST RECOVERY DIODE 10.5±0.5 ø3.2 -0.1 +0.2 (800V / 5A) Outline drawings, mm 4.5±0.2 2.7±0.2 6.3 2.7±0.2 1 3 3.7±0.2 1.2±0.2 13Min www.DataSheet4U.com Features 5.08±0.4 0.7±0.2 15±0.3 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design High reliability JEDEC EIAJ SC-67 Applications High speed switching C.

Features

5.08±0.4 0.7±0.2 15±0.3 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design High reliability JEDEC EIAJ SC-67 Applications High speed switching Connection Diagram 1 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Terminals-to-Case, AC.1min Square wave, duty=1/2, Tc=122°C Sine wave 10ms Conditions Rating 800 850 1500 5 70 +150 -40 .